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Ultra-short pulse generation by a topological insulator based saturable absorber

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WOS被引频次:209
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成果类型:
期刊论文
作者:
Zhao, Chujun;Zhang, Han;Qi, Xiang;Chen, Yu;Wang, Zhiteng;Wen, Shuangchun;Tang, Dingyuan
通讯作者:
Zhao, C.
作者机构:
[Zhao, Chujun ; Wang, Zhiteng ; Wen, Shuangchun ; Zhang, Han ; Chen, Yu ] Key Laboratory for Micro- and Nano-Optoelectronic Devices, Hunan University, Ministry of Education, Changsha 410082, China
[ Tang, Dingyuan ] School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
[ Qi, Xiang ] Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Faculty of Materials and Optoelectronic Physics, Xiangtan University, Xiangtan 411105, China
通讯机构:
[Zhao, CJ] Hunan Univ, Key Lab Micro & Nano Optoelect Devices, Minist Educ, Coll Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China.
语种:
英文
关键词:
1550 nm - Optoelectronic properties - Passive mode - Saturable absorption - Telecommunication bands - Topological insulators - Ultra-fast photonics - Ultrafast pulse - Ultrashort pulse generation - Z-scan measurement
期刊:
Applied Physics Letters
ISSN:
0003-6951
年:
2012
卷:
101
期:
21
页码:
211106
文献类别:
WOS:Article;EI:Journal article (JA)
所属学科:
ESI学科类别:物理学;WOS学科类别:Physics, Applied
入藏号:
WOS:000311477600006;EI:20124815738864
基金类别:
National 973 Program of China [2012CB315701]; National Natural Science Foundation of China [61025024, 61205125]; Hunan Provincial Natural Science Foundation of China [12JJ7005]; Program for New Century Excellent Talents in University of China [NCET 11-0135]; National Natural Science Fund Foundation of China for Excellent Young Scholars [61222505]
机构署名:
本校为其他机构
院系归属:
物理与光电工程学院
材料科学与工程学院
摘要:
Under strong laser radiation, a Dirac material, the topological insulator (TI) Bi<inf>2</inf>Te<inf>3</inf>, exhibits an optical transmittance increase as a result of saturable absorption. Based on an open-aperture Z-scan measurement at 1550 nm, we clearly show that the TI, Bi<inf>2</inf>Te<inf>3</inf> under our investigation, is indeed a very-high-modulation-depth (up to 95%) saturable absorber. Furthermore, a TI based saturable absorber device was fabricated and used as a passive mode locker for ultrafast pulse formation at the telecommunication band. This contribution unambiguously shows that apart from its fantastic electronic property, a TI (Bi<inf>2</inf>Te<inf>3</inf>) may also possess attractive optoelectronic property for ultrafast photonics. &copy;2012 American Institute of Physics.
参考文献:
Bao QL, 2009, ADV FUNCT MATER, V19, P3077, DOI 10.1002/adfm.200901007
Bernard F., 2012, NONLINEAR PHOTONICS
Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/nphoton.2010.186, 10.1038/NPHOTON.2010.186]
Cabasse A., 2009, CLEO EUR EQEC 2009 C
Chen YL, 2009, SCIENCE, V325, P178, DOI 10.1126/science.1173034

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